Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits
نویسندگان
چکیده
CDM ESD event has become the main ESD reliability concern for integrated-circuits products using nanoscale CMOS technology. A novel CDM ESD protection design, using self-biased current trigger (SBCT) and source pumping, has been proposed and successfully verified in 0.13-lm CMOS technology to achieve 1-kV CDM ESD robustness. 2007 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 47 شماره
صفحات -
تاریخ انتشار 2007